Our Record Book for Successful IC Modification


A TEM sample showing a multiple vias between two metal bus lines. The thickness of this sample is less than 1000Å. The same TEM sample with vertical view of the thin film.

A 5 nm column image showing the cross section of a 4 MB DRAM cells. (courtesy of Micrion Corp.)

Micro-surgeries are performed on this three-layer metal ASIC device. Six connections range from 150-400 um were made contact between M3, M2, and M1. Total of seven locations on M1, M2, and M3 were cut to change the circuitry. This surgery took over eight hours and was successful on the first try.